View HBT169M_193084.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HM200105 Issued Date : 2001.10.01 Revised Date : 2001.11.20 Page No. : 1/4
HBT169M
THYRISTORS
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
SOT-89
Quick Reference Data
Symbol VDRM, VRRM IT(AV) IT(RMS) ITSM Parameter Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current Max. 400 0.5 0.8 8 Unit V A A A
Pin Configuration
Pin 1 2 3 Gate Anode Cathode
1 2 3
Description
Symbol
A K G
Limtiing Values
Symbol VDRM, VRRM IT(AV) IT(RMS) ITSM I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj Parameter Repetitive peak off-state voltages Average on-state current (half sine wave; Tlead83C) RMS on-state current (all conduction angles) Non-repetitive peak on-state current (t=10ms) Non-repetitive peak on-state current (t=8.3ms) I2t for fusing (t=10ms) Repetitive rate of rise of on-state current after triggering (ITM=2A; IG=10mA; dIG/dt=100mA/us) Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power (over any 20ms period) Storage temperature Operating junction temperature Min. Max. 400 0.5 0.8 8 9 0.32 50 1 5 5 2 0.1 150 125 Units V A A A A A2S A/us A V V W W C C
HBT169M
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Thermal Resistances
Symbol Parameter Conditions Min. -
Spec. No. : HM200105 Issued Date : 2001.10.01 Revised Date : 2001.11.20 Page No. : 2/4
Typ. 150
Max. 60 -
Unit K/W K/W
Rth j-lead Thermal resistance junction to lead pcb mounted; Rth j-a Thermal resistance junction to ambient lead length=4mm
Static Characteristics (Ta=25C)
Symbol IGT IL IH VT VGT Parameter Gate Trigger Current Latching Current Holding Current On-state Voltage Conditions VD=12V, IT=10mA Gate open circuit VD=12V, IGT=0.5mA; RGK=1k VD=12V, IGT=0.5mA; RGK=1k IT=1A VD=12V, IT=10mA Gate open circuit VD= VDRM(max), IT=10mA; Tj=125C Gate open circuit VD=VDRM(max); VR= VRRM(max); Tj=125C; RGK=1k Min. 0.2 Typ. 50 2 2 1.2 0.5 0.2 0.05 Max. 200 6 5 1.35 0.8 0.1 Unit uA mA mA V V V mA
Gate Trigger Voltage
ID,IR
Off-state Leakage Current
Static Characteristics
Symbol dVD/dt tgt Parameter Critical rate of rise of off-state voltage Conditions Min. 500 Typ. 800 2 Max. Unit V/us us VDM=67% VDRM(max); Tj=125C exponential waveform; RGK=1k Gate controlled turn-on ITM=2A; VD=VDRM(max) time IG=10mA; dIG/dt=0.1A/us VD=67% VDRM(max); Tj=125C Circuit commutated ITM=1.6A; VR=35V; dITM/dt=30A/us turn-off time dVD/dt=2V/us; RGK=1k
tq
-
100
-
us
HBT169M
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Normalised Gate Trigger Current IGT(Ta)/IGT(25 C), Versus Air Temperature Ta
1.1 1.0 0.9 4
o
Spec. No. : HM200105 Issued Date : 2001.10.01 Revised Date : 2001.11.20 Page No. : 3/4
Typical & Maximum On-state Characteristic
5 typ 25C 125C
IGT/IGT(25 C)
0.8 0.7 0.6 0.5 0.4 0.3 0.2 -25 25 75
3
o
IT/A
2 1 0 125 175 0.0
Ta( C)
o
0.5
1.0
1.5
2.0
2.5
VT/V
Normalised Gate Trigger Voltage VGT(Ta)/VGT(25 C), Versus Air Temperature Ta
1.6
o
Normalised Holding Current IH(Ta)/IH(25 C), Versus Air Temperature Ta
3.0
o
1.4
2.5
VGT/VGT(25 C)
o
1.2
2.0
1.0
IH/IH(25 C)
o
1.5
0.8
1.0
0.6
0.5
0.4
0.0 -50 0 50 o Ta( C) 100 150 0 20 40 60
o
80
100
120
140
Ta/( C)
Normalised Latching Current IL(Ta)/IL(25 C), Vrsus Air Temperature Ta
1.8 1.6 0.8 1.4 0.7 1.0 0.9
o
Maximum On-atate Dissipation, Ptot Versus Average On-state Current, IT(AV) a=conduction angle
a=90 a=180 a=120
IL/IL(25 C)
1.2 1 0.8 0.6 0.4 -25 0 25 50
o
Ptot/W
75 100 125 150
0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0
o
Ta( C)
IF(AV)/A
HBT169M
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-89 Dimension
Marking:
Spec. No. : HM200105 Issued Date : 2001.10.01 Revised Date : 2001.11.20 Page No. : 4/4
C
H
Date Code 169 Laser Marking HM
B 1 E F G A 2 3
D
Style: Pin 1.Gate 2.Anode 3.Cathode
I
3-Lead SOT-89 Plastic Surface Mounted Package HSMC Package Code: M
*: Typical
DIM A B C D E
Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.0141 0.0201
Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51
DIM F G H I
Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161
Millimeters Min. Max. 1.48 1.52 2.96 3.04 1.40 1.60 0.35 0.41
Notes: 1.Dimension and tolerance based on our Spec. dated May. 05,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBT169M
HSMC Product Specification

▲Up To Search▲

Price & Availability of HBT169M

	To Download HBT169M Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .